Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2008-08-05
2011-10-18
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S457000, C257SE33025, C257SE33028, C257SE33031
Reexamination Certificate
active
08039370
ABSTRACT:
A method for transferring a layer onto a support includes transferring the layer, assembled on an initial substrate, onto a liquid layer that has been previously deposited on the support. The layer is subsequently released from the initial substrate by chemical etching, and the liquid layer is evacuated to allow molecular adhesion of the layer to the support.
REFERENCES:
patent: 6214733 (2001-04-01), Sickmiller
patent: 2003/0213950 (2003-11-01), Hwang
patent: 2008/0271835 (2008-11-01), Di Cioccio et al.
patent: 0 441 270 (1991-08-01), None
French Preliminary Search Report dated Mar. 10, 2009 (12 pgs).
Damiencourt, et al., “High'Quality Fully Relaxed In0.65Ga0.35As Layers Grown on InP Using the Paramorphic Approach”—Applied Physics Letters—vol. 75, No. 23—Dec. 6, 1999, pp. 3638-3640.
Kostrzewa M. et al., “Feasibility of Strain Relaxed InAsP and InGaAs Compliant Substrates”—2003 IEEE, pp. 437-440.
Kostrzewa M. et al., “Feasibility of III-V On-Silicon Strain Relaxed Substrates”—Journal of Crystal Growth 275(2005), pp. 157-166.
Lo, Y.H., “New Approach to Grow Pseudomorphic Structure over the Critical Thickness”—Jun. 27, 1991; accepted for publication Aug. 29, 1991, 3 pages.
Srinivasan et al., “Microstructure of Substrate Self-Assembly Using Capillary Forces”—Journal of Microelectromechanical Systems, vol. 10, No. 1, Mar., 2001, pp. 17-24.
Wu, Ye-Ee et al., “Applying Liquid Protection Method to Solid-State Bonding Process of AA7075 Aluminum Alloys”—Journal of Materials Processing Technology, (2003), pp. 700-704.
Yin, H. et al., “Strain Relaxation of SiGe Islands on Compliant Oxide”—Journal of Applied Physics, vol. 91, No. 12, Jun. 15, 2002, pp. 9716-9722.
Bordel Damien
Di Cioccio Léa
Brinks Hofer Gilson & Lione
Commissariat a l''Energie Atomique
Maldonado Julio J
LandOfFree
Method of transferring a layer onto a liquid material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of transferring a layer onto a liquid material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of transferring a layer onto a liquid material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4269146