Method of three-dimensional microfabrication and...

Details Method of three-dimensional microfabrication and... Method of three-dimensional microfabrication and...

2004-04-13

2008-10-07

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21134

Reexamination Certificate

active

07432176

ABSTRACT:
Surface of a thin film formed on a surface of substrate of AlxGayIn1-x-yAszP1-z(0≦x<1, 0≦y and z≦1) including substances GaAs and InP is irradiated with electron beams controlled at any arbitrary electron beam diameter and current density so as to cause any natural oxide film formed on GaAs surface to undergo selective Ga2O3substitution or formation. Thereafter, the temperature of the substrate is adjusted to given temperature so as to effect detachment of the natural oxide film at region other than that of Ga2O3substitution. Selective growth of a Group III-V compound semiconductor crystal is carried out on the substrate on its side of natural oxide film detachment in accordance with the molecular beam epitaxial growing technique to thereby achieve an increase of substrate density. On-site formation of a circuit pattern having the crystal film thickness along the direction of crystal growth uniformalized on the order of nanometers is accomplished.

REFERENCES:
patent: 7348222 (2008-03-01), Shimomura et al.
patent: 2003/0011515 (2003-01-01), Warble et al.
patent: 3-192719 (1991-08-01), None
patent: 8-264446 (1996-10-01), None

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