Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-09-16
2000-01-25
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
H01L 21302
Patent
active
060178221
ABSTRACT:
A method of thinning a product wafer using equipment designed for a wafer diameter, where the diameter of the product wafer is smaller than the wafer diameter of the thinning equipment by cutting an opening in a template wafer, where the template wafer is of a diameter that may be thinned by the thinning equipment, and where the opening accommodates the product wafer; affixing the template wafer to a holding material; affixing the product wafer to the holding material and inside of the template wafer with the integrated circuit side up; depositing an etch stop onto a handle wafer, where the handle wafer is at least as large as the template wafer; bonding adhesively the product wafer to the etch stop; removing the holding material; filling any gaps between the product wafer and the template wafer; using wax to make the product wafer sufficiently planar; thinning the product wafer using the thinning equipment; removing any excess wax; bonding adhesively the product wafer to a transfer wafer, where the transfer wafer is at least as large as the template wafer; removing the handle wafer; removing the etch stop; and removing any adhesive that remains on the product wafer.
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U.S. application No. 08/900,869, Mountain, filed Jul. 25, 1997.
Deo Duy-Vu
Morelli Robert D.
The United States of America as represented by The National Secu
Utech Benjamin L.
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