Method of thinning a semiconductor wafer using a film frame

Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier

Reexamination Certificate

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C438S458000, C438S459000, C438S460000

Reexamination Certificate

active

08084335

ABSTRACT:
A method for manufacturing a thin semiconductor wafer. A semiconductor wafer is thinned from its backside followed by the formation of a cavity in a central region of the backside of the semiconductor wafer. Forming the cavity also forms a ring support structure in a peripheral region of the semiconductor wafer. An electrically conductive layer is formed in at least the cavity. The front side of the semiconductor wafer is mated with a tape that is attached to a film frame. The ring support structure of the semiconductor wafer is thinned to form the thinned semiconductor wafer. A backside tape is coupled to semiconductor wafer and to the film frame and the tape coupled to the front side of the semiconductor wafer is removed. The thinned semiconductor wafer is singulated.

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patent: 7148125 (2006-12-01), Suzuki et al.
patent: 2007/0077731 (2007-04-01), Masuda
patent: 2007/0155131 (2007-07-01), Contes
patent: 2008/0242052 (2008-10-01), Feng et al.
patent: 2010/0003771 (2010-01-01), Nagai et al.

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