Method of thinning a semiconductor structure

Details Method of thinning a semiconductor structure Method of thinning a semiconductor structure

2007-08-07

2007-08-07

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S455000, C438S458000, C438S977000, C257S021000

Reexamination Certificate

active

11154641

ABSTRACT:
First and second semiconductor wafers are bonded together, with at least one of the wafers having a first layer of silicon, an intermediate oxide layer and a second layer of silicon. The first silicon layer is initially mechanically reduced by around 80% to 90% of its thickness. The remaining silicon layer is further reduced by a plasma etch which may leave an uneven thickness. With appropriate masking the uneven thickness is made even by a second plasma etch. Remaining silicon is removed by a dry etch with XeF2 or BrF3 to expose the intermediate oxide layer. Prior to bonding, the semiconductor wafers may be provided with various semiconductor devices to which electrical connections are made through conducting vias formed through the exposed intermediate oxide layer.

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