Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-09-06
1999-09-14
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438672, H01L 2144
Patent
active
059536292
ABSTRACT:
Ultra fine powder of metal dispersed in organic solvent is applied onto a surface of a semiconductor substrate, and heated to evaporate solvent and to sinter the ultra fine powder of metal. Deep contact holes or via holes, and grooves or trenches in the substrate can be filled up with metal, and the surface of the substrate can be covered with thin metal film.
REFERENCES:
patent: 4569876 (1986-02-01), Nakikta
patent: 5294567 (1994-03-01), Dorfman
Imazeki Nobuya
Nakayama Izumi
Oda Masaaki
Berry Renee R.
Bowers Charles
Vacuum Metallurgical Co., Ltd.
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