Method of thin film forming on semiconductor substrate

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438672, H01L 2144

Patent

active

059536292

ABSTRACT:
Ultra fine powder of metal dispersed in organic solvent is applied onto a surface of a semiconductor substrate, and heated to evaporate solvent and to sinter the ultra fine powder of metal. Deep contact holes or via holes, and grooves or trenches in the substrate can be filled up with metal, and the surface of the substrate can be covered with thin metal film.

REFERENCES:
patent: 4569876 (1986-02-01), Nakikta
patent: 5294567 (1994-03-01), Dorfman

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of thin film forming on semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of thin film forming on semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of thin film forming on semiconductor substrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1519866

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.