Method of thermally processing semiconductor wafer

Details Method of thermally processing semiconductor wafer Method of thermally processing semiconductor wafer

1999-09-16

2000-10-03

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

H01L 21324

Patent

active

061272884

ABSTRACT:
In a method of thermally processing a semiconductor wafer, a range of tolerable thermal stresses and tolerable temperature distribution is specified to avoid slip line generation. The rate of change of the in-plane temperature distribution of the wafer is controlled within the range of tolerable thermal stress. The wafer is differentially heated at an edge and at a center area specifically so as to induce a thermal stress opposite to the previous existing residual stress of the wafer. A wafer initially having a tangential compressive stress at the edge thereof is subjected to a tangential tensile stress.

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Mokuya et al. "Characteristics of the transient wafer temperature distribution in a furnace for semiconductor fabrication processes" Electronics and Communications in Japan (Part 2) Dec. 1987. vol. 70. No. 12, p. 59-65, Dec. 1987.

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