Method of the production of polycrystalline silicon thin films

Details Method of the production of polycrystalline silicon thin films Method of the production of polycrystalline silicon thin films

1994-07-29

1995-11-28

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427255, 4272551, 427314, 427402, 437233, B05D 306, C23C 1624

Patent

active

054706190

ABSTRACT:
A method is disclosed for the production of polycrystalline silicon thin films characterized by performing heat treatment of amorphous silicon thin films deposited on a substrate at a relatively low temperature of between 300.degree. and 600.degree. C. under a pressure ranging from 10.sup.-3 to 1 torr. The method can provide polycrystalline silicon thin films having increased grain sizes of about 60-300 .mu.m. In accordance with the method, glass or ceramic substrates can be used instead of an expensive quartz substrate. SiH.sub.4 gas can also be used instead of Si.sub.2 H.sub.6 gas as a source gas. The polycrystalline silicon thin films disclosed have an electron and positive hole mobility closer to that of the level of single crystals, and thus the development of the SOI element having high performance such as TFT for LCD, or TFT for SRAM, and the like may be greatly advanced.

REFERENCES:
patent: 4406709 (1983-09-01), Celler et al.
patent: 5116811 (1992-05-01), Abe et al.
patent: 5130103 (1992-07-01), Yamagata et al.
patent: 5242855 (1993-09-01), Oguro
patent: 5318919 (1994-06-01), Nouguchi et al.
R. B. Iverson et al, "Recrystallization of Amorphized Polycrystalline Silicon Films on SiO.sub.2 ", J. Appl. Phys., vol. 62, pp. 170-176 (1987).
K. Nakazawa et al, "Effect of Substrate Temperature on Recrystallization of Plasma Chemical Vapor Deposition Amorphous Silicon Films", J. Appl. Phys., vol. 68(3), pp. 1029-1032 (1990).
K. Nakazawa, "Recrystallization of Amorphous Silicon Films Deposited by Low-Pressure Chemical Vapor Deposition From Si.sub.2 H.sub.6 Gas", J. Appl. Phys., vol. 69(3), pp. 1703-1706 (1991).
A. T. Voutsas, "Deposition and Crystallization of a-Si Low Pressure Chemically Vapor Deposited Films Obtained by Low-Temperature Pyrolysis of Disilane", J. Electrochem. Soc., vol. 140, No. 3, pp. 871-877 (1993).

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