Method of testing nonvolatile memory device

Details Method of testing nonvolatile memory device Method of testing nonvolatile memory device

2011-08-23

2011-08-23

Dinh, Son T (Department: 2824)

Static information storage and retrieval

Read/write circuit

Testing

C365S200000

Reexamination Certificate

active

08004914

ABSTRACT:
A method includes performing test bit setting; programming a first page using data set by the test bit setting, and storing a fail status bit in a page buffer, which is connected to a first bit line having a fail status, based on a verification result of the test program; performing a test program and verification on a second page based on a test program and fail status bit storage result of a preceding page, and storing a fail status bit in the page buffer, which is connected to a second bit line having a fail status, based on a verification result of the test program and verification; and after a test program, verification, and fail status bit setting with respect to the entire pages of a memory block are completed, outputting data of the page buffer.

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Notice of Allowance issued from Korean Intellectual Property Office on Nov. 6, 2009.

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