Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2007-07-13
2011-11-15
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C438S627000, C257SE21527
Reexamination Certificate
active
08058081
ABSTRACT:
A method comprises providing a semiconductor structure. The semiconductor structure comprises a feature comprising a first material and a layer of a second material formed over the feature. The semiconductor structure is exposed to an etchant. The etchant is adapted to selectively remove the first material, leaving the second material substantially intact. After exposing the semiconductor structure to the etchant, it is detected whether the feature has been affected by the etchant.
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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2006 062 015.1 dated Mar. 18, 2010.
Koschinsky Frank
Langer Eckhard
Meyer Moritz Andreas
Advanced Micro Devices , Inc.
Kim Sun M
Landau Matthew
Williams Morgan & Amerson P.C.
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