Method of synthesizing silicon wires

Details Method of synthesizing silicon wires Method of synthesizing silicon wires

2009-10-23

2011-11-15

Nguyen, Kimberly D (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

08058117

ABSTRACT:
A method of synthesizing silicon wires is provided. A substrate is provided. A copper catalyst particle layer is formed on a top surface of the substrate. The reactive device is heated at a temperature of above 450° C. in a flowing protective gas. A mixture of a protective gas and a silicon-based reactive gas is introduced at a temperature above 450° C. at a pressure below 700 Torr to form the silicon wires on the substrate.

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patent: 2005-46928 (2005-02-01), None
Liu et al. “Enhanced Field Emission Properties of Vertically-oriented Silicon Nanowire Arrays” Journal of Vacuum Science and Technology (China), vol. 25, No. 4, p. 312-314, (2005).
Liu et al. “Synthesis of Silicon Nanowires by Thermally Evaporating Copper Powder” Journal of Materials Science & Engineering (China), vol. 23, No. 4, p. 589-592, (2005).

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