Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-08-22
2006-08-22
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S781000, C438S790000, C438S794000
Reexamination Certificate
active
07094709
ABSTRACT:
The present invention relates to metal oxide coating materials that can be used as thin film thin film coatings on various substrate surfaces. The invention also concerns a method of making metal oxide material which are stable in aqueous phase and that can be deposited on a substrate by liquid phase deposition, such as spin-on deposition. The new materials can be patterned lithographically or non-lithographically and are applicable for building up various electronic and opto-electronic device structures, such as anti-reflection layers, high-k interlayer and gate oxide structures for ICs, etch stop layer, CMP stop layer, solar cells, OLEDs packaging, optical thin film filters, optical diffractive grating applications and hybrid thin film diffractive grating structures.
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patent: 5962608 (1999-10-01), Ryang et al.
patent: 0 263 428 (1997-06-01), None
patent: 581-510 (1993-07-01), None
patent: 08 269398 (1996-10-01), None
Copy of International Search Report for Serial No. PCT/FI2005/000280 dated Sep. 21, 2005.
Braggone Oy
Lee Hsien-Ming
McCormick Paulding & Huber LLP
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