Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-12-03
1999-11-30
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427249, 427122, B05D 306, C23C 1626
Patent
active
059939192
ABSTRACT:
In a method of synthesizing diamond on a substrate from plasma containing a carbon component, filaments containing tungsten as a thermoelectron-emitting material are arranged above a substrate in a chamber. An electrode is provided at a position separated from and particularly above the filaments. The filaments are at least temporarily energized with a potential relatively higher than that of the substrate, while the electrode is at least temporarily supplied with a potential relatively higher than that of the filaments. Thus, plasma is generated between the filaments and the substrate, while electrons are moved from the filaments to the electrode for also generating plasma between the filaments and the electrode, thereby forming nuclei of diamond on the substrate. Thereafter, the respective potentials of the electron emitting filaments and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.
REFERENCES:
patent: 5698328 (1997-12-01), Bunshah et al.
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Article: "Heteroepitaxial diamond growth on (100) silicon" by Jiang et al.; pp. 1112-1113; Diamond and Related Materials, No. 2, (1993).
Article: "Textured diamond growth on (100) .beta.-SiC via microwave plasma chemical vapor deposition" by Stoner et al.; pp. 698-700; Appl. Phys. Lett. 60(6), Feb. 10, 1992.
Summaries of Lecture in the Fourth Diamond Symposium by Fujita et al.; pp. 13-14, (1991).
Inuzuka et al.; Extended Abstracts (the 43rd Spring Meeting, 1996), the Japan Society of applied Physics and Related Societies, No. 2, p. 403, 26a-T-9.
"Generation of diamond nuclei by electric field in plasma chemical vapor deposition" by Yugo et al.; pp. 1036-1038; Appl. Phys. Lett. vol. 58, No. 10, (1991).
"Synthesis of oriented textured diamond films on silicon via hot filament chemical vapor deposition", by Chen et al.; pp. 1853-1855; No. 13 (1995), Appl. Phys. Lett. vol. 67.
Imai Takahiro
Kumazawa Yoshiaki
Tsuno Takashi
Yoshida Kentaro
Fasse W. F.
Fasse W. G.
King Roy V.
Sumitomo Electric Industries Ltd.
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