Method of synthesizing cubic system boron nitride

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156DIG86, 156DIG99, 423210, C30B 2938

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046996877

ABSTRACT:
Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achieve a required temperature gradient from chamber to chamber. A plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources are placed in the chambers according to the temperature gradient. The BN sources are placed in contact with solvent portions heated to relatively high temperatures. At least one seed crystal is placed in each solvent portion heated to relatively low temperatures. At least one cubic system boron nitride crystal is grown in each of the solvents in the chambers by the above heating of the synthesizing vessel under conditions of ultra-high pressure and temperatures assuring the required temperature gradient.

REFERENCES:
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Article entitled: Phase Equilibria Pertinent to the Growth of Boron Nitride; by R. C. De Vries and J. F. Fleischer; Journal of Crystal Growth; 13/14 (1972), 88-92; published by North-Holland Publishing Co.

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