Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1999-02-25
2000-11-28
Diamond, Alan
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419222, 20419232, 20419235, 20429812, 20429813, 20429806, 20419211, 20429804, 20429807, 20429819, C23C 1434
Patent
active
061530611
ABSTRACT:
A method of forming cubic phase boron nitride films in which a hexagonal boron nitride film target is positioned in front of an RF magnetron sputtering gun and is impacted with ions to cause atoms of boron and nitrogen to be sputtered away from the target and toward a substrate. At the same time, electrons are emitted into the system by an electron emitter, which electrons are attracted to the substrate as the boron and nitrogen atoms are being deposited on the substrate. The electrons cause the boron and nitrogen atoms to be reformed on the substrate as cubic phase boron nitride while suppressing the formation of other, less desirable forms of boron nitride films.
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Tzeng Yonhua
Zhu Hongbin
Auburn University
Diamond Alan
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