Method of synthesizing and growing copper-indium-diselenide (CuI

Details Method of synthesizing and growing copper-indium-diselenide (CuI Method of synthesizing and growing copper-indium-diselenide (CuI

1984-11-29

1987-03-24

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156DIG76, C30B 1500, C30B 2702

Patent

active

046523324

ABSTRACT:
A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

REFERENCES:
patent: 4083748 (1978-04-01), Fault
patent: 4303464 (1981-12-01), Suzuki et al.
J. B. Mullin et al, "Liquid Encapsulation Crystal Pulling at High Pressures", Journal of Crystal Growth, 1968, pp. 281-285.
Metz et al, "A Technique for Pulling Single Crystals of Volatile Materials", Journal of Applied Physics 6/62, pp. 2016-2017.

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