Method of switching an MRAM cell comprising bidirectional...

Details Method of switching an MRAM cell comprising bidirectional... Method of switching an MRAM cell comprising bidirectional...

2006-12-26

2006-12-26

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07154771

ABSTRACT:
The present invention relates to a method of switching a magnetoresistive memory (MRAM) cell including the following steps: providing an MRAM cell having a magnetic tunnel junction including first and second magnetic regions; the first magnetic region exhibiting a fixed magnetization, the second magnetic region exhibiting a free magnetization which is free to be switched between the same and opposite directions with respect to the fixed magnetization of the first magnetic region; the free magnetization being magnetically coupled to magnetic fields generated by first and second currents made to flow through first and second current lines, respectively; switching of the free magnetization by currents made to flow through the first and second current lines; and inverting of flowing directions of first and/or second currents for the switching of the free magnetization such that a respective time-averaged mean value of the first and/or second currents becomes essentially equal to zero.

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