Method of surface treatment of semiconductor

Details Method of surface treatment of semiconductor Method of surface treatment of semiconductor

2005-03-15

2005-03-15

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S723000

Reexamination Certificate

active

06867147

ABSTRACT:
A method of removing native oxide film from contact holes of a semiconductor device by using a microwave-excited reactive gas. The method increases throughput. Reactive gas is introduced substantially horizontally into the reactor (20) by way of a chamber (5, 22) arranged as an extension thereof in the vertical direction of the reactor (20) and showing an internal pressure higher than that of the reactor, while the plurality of semiconductor silicon wafers (10) that are arranged in the vertical direction and held to temperature not higher than 323 K are being rotated, and subsequently said reactor is heated (30) to above 373 K.

REFERENCES:
patent: 5460691 (1995-10-01), Kobayashi et al.
patent: 5556275 (1996-09-01), Sakata et al.
patent: 5607515 (1997-03-01), Takahashi
patent: 5775889 (1998-07-01), Kobayashi et al.
patent: 6171982 (2001-01-01), Sato
patent: 6204194 (2001-03-01), Takagi
patent: 5214531 (1993-08-01), None
patent: 5217987 (1993-08-01), None
patent: 06120188 (1994-04-01), None

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