Method of supplying excited oxygen

Details Method of supplying excited oxygen Method of supplying excited oxygen

1994-09-27

1999-11-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

427561, 427562, 427579, H01L 21316

Patent

active

059769920

ABSTRACT:
A method of supplying an excited oxygen, which comprises the steps of exciting a oxygen gas or a gas containing an oxygen atoms with plasma in a plasma discharge zone thereby forming an excited oxygen, and transferring a gas containing the excited oxygen into a reaction zone disposed next to the plasma discharge zone while keeping a pressure within the plasma discharge zone lower than that of the reaction zone. In a reaction chamber, a reaction by the excited oxygen is effected. As a result, the formation of a thin film on a substrate disposed in a reaction chamber, the etching of the substrate and the cleaning of the interior of the reaction chamber can be carried out.

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Jpn. J. Appl. Phys., vol. 33, 1994, pp. 3520-3527, Part 1, No. 6A, Jun. 1994, Sunil Wickramanayaka, et al., "Remote Plasma SiO2, Deposition by Tetraethoxysilane with Chemically and Energetically Different Atomic Species".

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