Method of structuring with metal oxide masks by reactive ion-bea

Details Method of structuring with metal oxide masks by reactive ion-bea Method of structuring with metal oxide masks by reactive ion-bea

1982-01-11

1983-06-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 1566591, 156667, 156904, 204192E, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

043903940

ABSTRACT:
Very fine circuit structures in microelectronics are produced by first applying a thin metal oxide layer uniformly over an entire surface of a layer to be etched, then applying a resist layer uniformly over the entire metal oxide layer and structuring such oxide layer by ion-beam etching and, utilizing the structured oxide layer as a mask, performing a dry-etching with an ion beam of the metal layer lying thereunder so as to attain structures having very unfavorable resist height to etching depth ratios.

REFERENCES:
patent: 3904462 (1975-09-01), Dimigen et al.
patent: 3975252 (1976-08-01), Fraser
patent: 4132586 (1979-01-01), Schaible et al.
Michel Contagrel, "Considerations on High Resolution Patterns Engraved by Ion Etching", IEEE Transactions on Electron Devices, vol. ED-22, Jul. 1975, pp. 483-486.

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