Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-08-26
2000-01-18
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 37, 216 59, 156345, 438719, 438 8, H01L 2100
Patent
active
060157585
ABSTRACT:
A method for stripping a film from a wafer substrate includes the steps of inserting a boat holding the wafer into a processing chamber of a CVD apparatus, and injecting gas into the chamber, to thereby strip the wafer of its film. A typical film requiring stripping is a polysilicon film grown on an underlying oxide layer of the substrate. In this case, CIF.sub.3 is used to strip the polysilicon film without damaging the oxide layer. Accordingly, this method is applicable to the quality testing of semiconductor wafer films using a test wafer. In such quality testing a film is formed on a test wafer substrate at the same time the semiconductor wafer film is formed. The film of the test wafer is tested to evaluate the quality of the formation of the semiconductor wafer film. The test wafer can then be stripped within the chemical vapor deposition apparatus and thus can be reused soon thereafter.
REFERENCES:
patent: 4786352 (1988-11-01), Benzing
patent: 5304405 (1994-04-01), Kobayashi et al.
patent: 5545289 (1996-08-01), Chen et al.
patent: 5916820 (1999-06-01), Okumura et al.
An Joong-il
Kim Jung-ki
Kim Kyung-su
Lim Jung-su
Powell William
Samsung Electronics Co,. Ltd.
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