Method of stripping a nitride layer from a wafer and wet etching

Details Method of stripping a nitride layer from a wafer and wet etching Method of stripping a nitride layer from a wafer and wet etching

1996-10-23

1998-12-01

Jones, Deborah

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

216 93, 156135L, 156135LC, C23F 100

Patent

active

058438505

ABSTRACT:
A method of stripping a nitride layer from a wafer includes the steps of putting the wafer into a process bath containing a stripping solution, passing the stripping solution from the process bath through a filter to remove the nitride particles contained therein, heating the filtered stripping solution through an in-line electrical heater with two heating parts connected in parallel to allow the stripping solution to quickly return to the proper etching temperature, and returning the temperature recovered stripping solution to the process bath. The filtered stripping solution is branched through the parallel heating parts to enable it to be quickly heated. The stripping solution may be a phosphoric acid solution, whose proper etching temperature is about 163.degree. C. The in-line heater consists of at least two heating parts connected in parallel, each with an electrical capacity of 6 KW.

REFERENCES:
patent: 4559098 (1985-12-01), Dunn
patent: 4980017 (1990-12-01), Kaji et al.

Affiliated with

Also associated with

Rating

Method of stripping a nitride layer from a wafer and wet etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of stripping a nitride layer from a wafer and wet etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of stripping a nitride layer from a wafer and wet etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2395503