Method of stress-relieving silicon oxide films

Details Method of stress-relieving silicon oxide films Method of stress-relieving silicon oxide films

1996-08-27

1998-07-28

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

H01L 2131

Patent

active

057862788

ABSTRACT:
A method of converting tensile stress in an APCVD oxide film at low temperature to compressive stress. The oxide film is subjected to pressures above atmospheric pressures and temperatures below the atmospheric pressure conversion temperature. This enables films to be converted to compressive stress without thermal damage to the underlying integrated circuit.

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