Method of storing GaN substrate, stored substrate, and...

Details Method of storing GaN substrate, stored substrate, and... Method of storing GaN substrate, stored substrate, and...

2007-06-14

2010-10-12

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S503000, C438S604000, C438S607000, C438S689000, C438S690000, C257SE21090, C257SE21119, C257SE21126, C257SE21222

Reexamination Certificate

active

07811908

ABSTRACT:
Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 μm, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the <1100> direction, and from 0° to 1° in the <1120> direction.

REFERENCES:
patent: 6211089 (2001-04-01), Kim et al.
patent: 6527857 (2003-03-01), Pankove
patent: 2005/0095861 (2005-05-01), Ueno et al.
patent: 2006/0032428 (2006-02-01), Dwilinski et al.
patent: 2006/0086948 (2006-04-01), Ohno et al.
patent: 1464543 (2003-12-01), None
patent: 1581525 (2005-02-01), None
patent: H02-204400 (1990-08-01), None
patent: H10-163114 (1998-06-01), None
patent: H11-274567 (1999-10-01), None
patent: 2000-082676 (2000-03-01), None
patent: 2000-355392 (2000-12-01), None
patent: 2003-197534 (2003-07-01), None
patent: 2004-043281 (2004-02-01), None
patent: 2004-104089 (2004-04-01), None
patent: 2005-029233 (2005-02-01), None

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