Method of storing data in ferroelectric memory device

Details Method of storing data in ferroelectric memory device Method of storing data in ferroelectric memory device

2005-09-06

2005-09-06

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06940742

ABSTRACT:
A method of storing data in a ferroelectric memory device is capable of dealing with a program request during a read cycle or a change in program data during a program cycle. In this data storage method, the program cycle or the read cycle is performed for selected memory cells selected from among a plurality of memory cells, and each of the program cycle or the read cycle includes a period for writing data “0” and a period for writing data “1” into the selected memory cells. When a program request occurs in the period for writing the data “0” (read period) in the read cycle, the data “1” is written into the selected memory cells according to program data designated by the program request.

REFERENCES:
patent: 5615145 (1997-03-01), Takeuchi et al.
patent: 5715190 (1998-02-01), Honjo et al.
patent: 6795330 (2004-09-01), Demange et al.
patent: 09-116107 (1997-05-01), None
U.S. Appl. No. 10/747,395, filed Dec. 30, 2003, Maruyama.
U.S. Appl. No. 10/747,523, filed Dec. 30, 2003, Maruyama.
U.S. Appl. No. 10/754,691, filed Jan. 12, 2004, Maruyama.
U.S. Appl. No. 10/737,959, filed Dec. 18, 2003, Maruyama.
U.S. Appl. No. 10/752,184, filed Jan. 7, 2004, Maruyama.
U.S. Appl. No. 10/758,179, filed Jan. 16, 2004, Maruyama.
U.S. Appl. No. 10/822,807, filed Apr. 13, 2004, Watanabe.

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