Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2006-05-26
2010-06-22
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S460000, C257SE21523, C257SE21524
Reexamination Certificate
active
07741195
ABSTRACT:
A method includes providing a wafer having a first die and a scribe grid, where the first die has die circuitry and a bond pad electrically connected to the die circuitry, and where the scribe grid has a scribe grid pad electrically connected to the die circuitry. The method further includes accessing the scribe grid pad to stimulate the die circuitry. A wafer includes a first die. The first die includes die circuitry, a plurality of conductive layers, and a bond pad electrically connected to the die circuitry via at least one conductive layer of the plurality of conductive layers. The wafer includes a scribe grid having a scribe grid pad, and an interconnect electrically connecting the scribe grid pad to the die circuitry. The plurality of die of the wafer can then be singulated, and at least one of the singulated die can be packaged.
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Rashed Mahbub M.
Rashid Mohammed K.
Roth Scott S.
Chiu Joanna G.
Freescale Semiconductor Inc.
Ghyka Alexander G
Nikmanesh Seahvosh J
Vo Kim-Marie
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