Method of stabilizing low dielectric constant films

Details Method of stabilizing low dielectric constant films Method of stabilizing low dielectric constant films

1998-01-12

2000-02-01

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438723, H01L 2100

Patent

active

060202734

ABSTRACT:
A method of forming dielectric films is described wherein the low dielectric constant of a layer of dielectric material having a low dielectric constant, such as low dielectric constant spin-on-glass, is stabilized to prevent subsequent processing steps from increasing the dielectric constant. The layer of dielectric material having a low dielectric constant is treated in an inert atmosphere, such as nitrogen or argon, at an elevated temperature. This inert atmosphere treatment of the dielectric prevents the dielectric constant from increasing during subsequent processing steps.

REFERENCES:
patent: 5270267 (1993-12-01), Ovellet
patent: 5393702 (1995-02-01), Yang et al.
patent: 5549786 (1996-08-01), Jones et al.
patent: 5567658 (1996-10-01), Wang et al.
patent: 5643407 (1997-07-01), Chang

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