Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-08-28
1999-11-02
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 2041922, 20419216, 20429813, C23C 1434
Patent
active
059763264
ABSTRACT:
A Co--Pt based magnetic alloy which has been sputtered with an oxide or nitride of a primary constituent of the magnetic layer, e.g., CoO below about 10 at. %, provides improved coercivity, squareness, and reduced noise as compared to magnetic alloys with oxygen introduced by other methods. The alloy is vacuum deposited, for example, by sputtering, and the oxide or nitride may be introduced from the sputtering target from which the magnetic layer materials come or from a separate sputtering target. Examples of such oxides and nitrides include CoO, Co.sub.2 0.sub.3, Co.sub.3 O.sub.4, CrO.sub.2, Cr.sub.2 O.sub.3, TiO.sub.2, Ta.sub.2 O.sub.5, Al.sub.2 O.sub.3, WO, CoN, Co.sub.2 N, TiN, TaN, CrN, NiN, etc.
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Chen Tu
Lu Miaogen
Ranjan Rajiv Yadav
Yamashita Tsutomu Tom
Cantelmo Gregg
Komag Incorporated
Nguyen Nam
Small Jonathan A.
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