Method of sputtering a silicon nitride film

Details Method of sputtering a silicon nitride film Method of sputtering a silicon nitride film

1995-05-09

1996-08-27

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 40, 437 41, 20419223, H01L 21318, C23C 1406

Patent

active

055500919

ABSTRACT:
There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.

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Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride, Jpn. J. Appl. Phys. vol. 31 (1992) pp. 336-342, Part 1, No. 2A, Feb. 1992 Ikunori Kobayashi, Tetsu Ogawa and Sadayoshi Hotta.

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