Method of sputtered depositing chromium-silicon-nitrogen resisto

Details Method of sputtered depositing chromium-silicon-nitrogen resisto Method of sputtered depositing chromium-silicon-nitrogen resisto

1985-06-03

1988-07-19

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, C23C 1434

Patent

active

047583215

ABSTRACT:
A resistor having an insulating substrate bearing a thin layer of the alloy CrSi.sub.x, where 1.ltoreq.x.ltoreq.5 and which layer is doped with nitrogen. The doping may be spread homogeneously throughout the thickness or be concentrated in one or two thickness zones on the outside and/or on the side adjoining the substrate. As a result of the nitrogen doping an improvement of the stability of the resistor is obtained.

REFERENCES:
patent: 4392992 (1983-07-01), Paulson et al.
"Sputtered Silicon-Chromium Resistive Films", J. Vacuum Science & Technology, 6, 1969, pp. 308-315, R. K. Waits.

Affiliated with

Also associated with

Rating

Method of sputtered depositing chromium-silicon-nitrogen resisto does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of sputtered depositing chromium-silicon-nitrogen resisto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of sputtered depositing chromium-silicon-nitrogen resisto will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-595642