Method of spin-on-glass planarization

Details Method of spin-on-glass planarization Method of spin-on-glass planarization

1998-12-16

2000-09-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438633, 438692, 438780, H01L 2131, H01L 21469

Patent

active

061177989

ABSTRACT:
A method of spin-on-glass planarization. A spin-on-glass layer is formed on a substrate. An accuflo layer with a better fluidity than the spin-on-glass material is formed on the spin-on-glass layer. The accuflo layer and the spin-on-glass layer are etched back by two etching steps with different etching rate. The accuflo layer after being etched is stripped. A dielectric layer is formed.

REFERENCES:
patent: 5607880 (1997-03-01), Suzuki et al.
patent: 5747381 (1998-05-01), Wu et al.
patent: 5783482 (1998-07-01), Lee et al.
patent: 5948700 (1999-09-01), Zheng et al.
patent: 6030706 (2000-02-01), Eissa et al.
patent: 6030892 (2000-02-01), Wu et al.

Affiliated with

Also associated with

Rating

Method of spin-on-glass planarization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of spin-on-glass planarization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of spin-on-glass planarization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-95837