Method of spin-on-glass etchback using hot backside helium

Details Method of spin-on-glass etchback using hot backside helium Method of spin-on-glass etchback using hot backside helium

1996-05-23

1998-05-19

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, H01L 2100

Patent

active

057535663

ABSTRACT:
A workpiece with a back surface and a front surface has a layer formed on the front surface thereof which is to be etched by plasma etching. The workpiece is placed on a lower electrode in a plasma etching system with the back surface resting on the lower electrode. The workpiece is clamped to the lower electrode. A gas circulation system is formed in the surface of the lower electrode to supply heated gas, under pressure, to the back surface of a workpiece placed thereon to cause the workpiece to bow thereby forming a vaulted space below the workpiece. Then, while heating the back of the workpiece in this way, plasma etching of the layer upon the workpiece is performed.

REFERENCES:
patent: 4478678 (1984-10-01), Watanabe
patent: 4775550 (1988-10-01), Chu et al.
patent: 4980022 (1990-12-01), Fujimura et al.
patent: 5310453 (1994-05-01), Fukasawa et al.
patent: 5462603 (1995-10-01), Murakami
patent: 5486235 (1996-01-01), Ye et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5584971 (1996-12-01), Komino

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