Method of simultaneously controlling ADI-AEI CD differences...

Details Method of simultaneously controlling ADI-AEI CD differences... Method of simultaneously controlling ADI-AEI CD differences...

2008-01-15

2008-01-15

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S640000, C438S673000, C257SE23145

Reexamination Certificate

active

11163981

ABSTRACT:
A method of simultaneously controlling the ADI-AEI CD differences of openings having different sizes is disclosed. The openings are formed by: forming an ARC and a photoresist layer with a first and a second opening patterns of different sizes therein on a material layer, and etching the ARC and the material layer with the photoresist layer as a mask to form in the material layer a first/second opening corresponding to the first/second opening pattern, wherein the etching recipe makes the first/second opening smaller than the first/second opening pattern by a first/second size difference (ΔS1/ΔS2) and the difference between ΔS1and ΔS2is a relative size difference. The method is characterized by that an etching parameter affecting the relative size difference is set at a first value in etching the ARC and at a second value different from the first value in etching the material layer.

REFERENCES:
patent: 6287951 (2001-09-01), Lucas et al.

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