Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-03-15
2005-03-15
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192150, C029S603010, C029S603040, C029S603070, C029S603130, C029S603140, C360S313000, C360S314000, C360S315000, C360S318000, C360S324000, C360S324100, C360S324110, C360S324120
Reexamination Certificate
active
06866751
ABSTRACT:
A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a preferential setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The preferential setting sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.
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IBM Technical Disclosure Bulletin, Jun. 1996, pp 103-104, “Canted Contiguous Hard Bias Stabilization for Very Thin Magnetoresistive/Giant Magneto-Resistance Sensor”.
Gill Hardayal Singh
Tran Andy Cuong
Hitachi Global Storage Technologies - Netherlands B.V.
Johnston Ervin F.
McDonald Rodney G.
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