Method of setting self-pinned AP pinned layers with a canted...

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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C204S192150, C029S603010, C029S603040, C029S603070, C029S603130, C029S603140, C360S313000, C360S314000, C360S315000, C360S318000, C360S324000, C360S324100, C360S324110, C360S324120

Reexamination Certificate

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06866751

ABSTRACT:
A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a preferential setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The preferential setting sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.

REFERENCES:
patent: 5583725 (1996-12-01), Coffey et al.
patent: 5818685 (1998-10-01), Thayamballi et al.
patent: 5880912 (1999-03-01), Rottmayer
patent: 5974657 (1999-11-01), Fox et al.
patent: 5999379 (1999-12-01), Hsiao et al.
patent: 6090498 (2000-07-01), Omata et al.
patent: 6127053 (2000-10-01), Lin et al.
patent: 6181535 (2001-01-01), Araki et al.
patent: 6243535 (2001-06-01), Bochud
IBM Technical Disclosure Bulletin, Jun. 1996, pp 103-104, “Canted Contiguous Hard Bias Stabilization for Very Thin Magnetoresistive/Giant Magneto-Resistance Sensor”.

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