Method of setting a stable melting zone in a semiconductor cryst

Details Method of setting a stable melting zone in a semiconductor cryst Method of setting a stable melting zone in a semiconductor cryst

1981-02-03

1984-03-13

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 1320

Patent

active

044365780

ABSTRACT:
Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof, by means of a single-winding induction heating coil having an inner diameter smaller than the diameter of a portion of the rod being fed to the melting zone which includes performing the crucible-free zone melting in an argon atmosphere at an overpressure in vicinity of at least 1.5 ata and maximally 6 ata, and setting the outer melting-zone height at a value of between 15 and 23 mm for a diameter of the recrystallized rod portion within a range of 30 to 50 mm, at a value of between 18 and 26 mm for a diameter of the recrystallized rod portion within a range of 50 to 75 mm and at a limiting value of 32 mm for a rod diameter greater than 75 mm.

REFERENCES:
patent: 3660062 (1972-05-01), Keller

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