Method of separating semiconductor devices

Details Method of separating semiconductor devices Method of separating semiconductor devices

1998-02-02

1999-11-30

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Semiconductor substrate dicing

With attachment to temporary support or carrier

438462, 438110, H01L 21301

Patent

active

059942053

ABSTRACT:
A top surface of a wafer, at which semiconductor devices are formed, is bonded to an auxiliary plate by means of a first wax. In a state where the auxiliary plate is bonded to a polishing jig by means of a second wax, a bottom surface of the wafer, at which a sapphire substrate is provided, is polished. The second wax is melted and the auxiliary plate is removed from the polishing jig. In this state, scribe lines are formed in the bottom surface of the wafer according to a device separation pattern. Then, the bottom surface of the wafer is attached to an adhesive sheet, following which the first wax is melted and the wafer is removed from the auxiliary plate 105. Subsequently, the adhesive sheet is extended and the wafer is divided into the devices along the scribe lines.

REFERENCES:
patent: 4722130 (1988-02-01), Kimura et al.
patent: 5071792 (1991-12-01), VanVonno et al.
patent: 5494549 (1996-02-01), Oki et al.
patent: 5824177 (1998-10-01), Yoshihara et al.
patent: 5888883 (1999-03-01), Sasaki et al.

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