Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-06-13
2010-12-07
Culbert, Roberts (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C216S065000
Reexamination Certificate
active
07846847
ABSTRACT:
A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on the substrate and a homogeneous beam spot is shaped to cover an integer number of the sections.
REFERENCES:
patent: 3959045 (1976-05-01), Antypas
patent: 5151389 (1992-09-01), Zappella
patent: 5171712 (1992-12-01), Wang et al.
patent: 5262347 (1993-11-01), Sands
patent: 5286335 (1994-02-01), Drabik et al.
patent: 5401983 (1995-03-01), Jokerst et al.
patent: 5776794 (1998-07-01), McCann
patent: 6013534 (2000-01-01), Mountain
patent: 6027988 (2000-02-01), Cheung et al.
patent: 6033995 (2000-03-01), Muller
patent: 6214733 (2001-04-01), Sickmiller
patent: 6300594 (2001-10-01), Kinoshita et al.
patent: 6335263 (2002-01-01), Cheung et al.
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6413839 (2002-07-01), Brown et al.
patent: 6417019 (2002-07-01), Mueller et al.
patent: 6425971 (2002-07-01), Silverbrook
patent: 6455340 (2002-09-01), Chua
patent: 6548386 (2003-04-01), Kondo et al.
patent: 6562648 (2003-05-01), Wong
patent: 6617261 (2003-09-01), Wong et al.
patent: 6645830 (2003-11-01), Shimoda et al.
patent: 6818530 (2004-11-01), Shimoda et al.
patent: 6858872 (2005-02-01), Kondo
patent: 6870125 (2005-03-01), Doi et al.
patent: 6902989 (2005-06-01), Na et al.
patent: 6949449 (2005-09-01), Swenson et al.
patent: 7015117 (2006-03-01), Urbanek
patent: 7105857 (2006-09-01), Nagahama et al.
patent: 7112456 (2006-09-01), Park et al.
patent: 2003/0104678 (2003-06-01), Kelly et al.
patent: 2005/0106839 (2005-05-01), Shimoda et al.
patent: 2005/0153525 (2005-07-01), Liu
patent: 2005/0239270 (2005-10-01), Fehrer et al.
patent: 2007/0295952 (2007-12-01), Jang et al.
patent: 2008/0023691 (2008-01-01), Jang et al.
patent: 10203795 (2003-08-01), None
patent: 2003234542 (2003-08-01), None
patent: 1020010101803 (2001-11-01), None
patent: 10 2004 5612 (2004-01-01), None
patent: 1020060059891 (2006-06-01), None
patent: 1020070122120 (2007-12-01), None
patent: 0047361 (2000-08-01), None
patent: 03065420 (2003-08-01), None
patent: 2004109764 (2004-12-01), None
patent: 2007136183 (2007-11-01), None
patent: 2007148866 (2007-12-01), None
patent: 2008078952 (2008-07-01), None
JPSAP Sercel Associates, Inc., “Price Quote Documents,” dated Jan. 17, 2000, Nov. 7, 2002, Nov. 4, 2002, Jul. 24, 2003 and Mar. 18, 2003.
Notice of Preliminary Rejection with English translation dated Oct. 30, 2007, received in corresponding Korean Application No. 2006-7022455, 7 pgs.
English language translation of Complaint for Invalidation of Korean Patent Registration No. 849779.
International Search Report with Written Opinion, mailed Aug. 1, 2006, received in corresponding PCT application (12 pages).
Lewelling, et al., “Finite-Element Modeling Predicts Possibility of Thermoelectrically Cooled Lead-Salt Diode Lasers” IEEE Photonics Technology Letters, vol. 9 No. 3, Mar. 1997, pp. 297-299 (3 pages).
McAlister, et al., “Fabrication of Thin-Film Cleaved Cavities Using a Bonding and Cleaving Fixture” IEEE Photonics Technology Letters, vol. 12, No. 1, Jan. 2000, pp. 22-24 (3 pages).
Riegler, et al., “Index Matching Silicone for High Brightness LED Packaging” NuSil Technology (9 pages).
UC Berkley, “Laser Lift-off & Film Transfer” article last updated Jun. 19, 2002 (4 pages).
Wong, et al., “Selective UV-Laser Processing for Lift-off of GaN Thin Films From Sapphire Substrates” Proceedings of the Symposium on LED for Optoeclectronic Applications and the 28th State of the Art Programs on Compound Semiconductors 98-2, 377, 1998 (8 pages).
Kelly, et al., “Optical Process for Liftoff of Group III-Nitride Films”, Rapid Research Note article, submitted Nov. 28, 1996 (8 pages).
Kelly, et al., “Laser-Processing For Patterned and Free-Standing Nitride Films”, Materials Research Society, vol. 482, pp. 973-978, 1998 (6 pages).
Peyre, et al., “Laser shock processing of materials, physical processes involved and examples of applications”, Journal of Laser Applications, 1996 (7 pages).
Fabbro, et al., “Physical study of laser-produced plasma in confined geometry”, Journal of Applied Physics, vol. 68 No. 2, Jul. 15, 1990 (10 pages).
Sameshima, “Laser beam application to thin film transistors”, Applied Surface Science, 1997 (7 pages).
Wong, et al., “Pulsed Excimer Laser Processing of Ain/GaN Thin Films”, Materials Research Society Symposium Proceedings, vol. 449, 1997 (6 pages).
Kelly, et al., “Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff”, Japanese Journal of Applied Physics, vol. 38, Mar. 1, 1999 (3 pages).
Wong, et al., “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off”, Applied Physics Letters, vol. 75 No. 10, Sep. 6, 1999 (3 pages).
Deng, et al., “Fabrication of Ultra-small Dimention SI1-xGEx Wires in SI Using Pulsed Laser Induced Epitaxy”, Department of Electrical Engineering and Applied Physics, pp. 444-446 (3 pages).
Wong, et al., “InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off”, Applied Physics Letters, vol. 77 No. 18, Oct. 30, 2000 (3 pages).
Wong, et al., “Ubiquitous Blue Light: The Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off” IEEE 2000 (6 pages).
Wong, et al., “Damage-free separatioin of GaN thin films from sapphire substrates”, Applied Physics Letters, vol. 72 No. 5, Feb. 2, 1998 (3 pages).
Luo, et al., “Enhancement of (In,Ga) N Light-Emitting Diode Performance by Laser Liftoff and Transfer From Sapphire to Silicon”, IEEE Photonics Technology Letters, vol. 14 No. 10, Oct. 2002 (3 pages).
Oriol Inc. (News Release) “Breakthrough in Vertical GaN LEDs Announced by High Brightness LED Startup Oriol, Inc.” Apr. 30, 2002 (2 pages).
Detchprohm, et al., “The growth of thick GaN film on sapphire substrate by using ZnO buffer layer”, Journal of Crystal Growth, vol. 128 No. 1-4, Mar. 1993 pp. 384-390 (7 pages).
Sink, et al., “Cleaved GaN facets water fusion of GaN to InP”, Applied Physics Letters, vol. 68 No. 15, Apr. 8, 1996 (3 pages).
Kelly, et al., “Optical patterning of GaN films”, Applied Physics Letters, vol. 69 No. 12, Sep. 16, 1996 (3 pages).
Lizotte, Todd E., “Beam Shaping for Microvia Drilling”, PC FAB, Cover Story, Feb. 2003, pp. 28-33 (5 pages).
Foreign office action dated Jul. 4, 2008 received in corresponding Chinese Application No. 200580015231.9, 6 pgs.
Chinese Office Action dated Nov. 13, 2009 issued in related Chinese Patent Application No. 20050015231.9.
Third Party Observation submitted in related Japanese Application No. 2007506445 on Dec. 4, 2009 and reported by Japanese Patent Office on Jan. 12, 2010 (Japanese Notification 4 pages; English language translation of Third Party Observation 8 pages).
EPO Office Action dated Apr. 28, 2010 received in corresponding EPO Application No. 05 731 585.5, 6 pgs.
Park Jongkook
Sercel Jeffrey P.
Sercel Patrick J.
Culbert Roberts
Grossman Tucker Perreault & Pfleger PLLC
J.P. Sercel Associates Inc.
LandOfFree
Method of separating layers of material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of separating layers of material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of separating layers of material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4206187