Method of separating layers of material

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

11008589

ABSTRACT:
A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on the substrate and a homogeneous beam spot is shaped to cover an integer number of the sections.

REFERENCES:
patent: 3808550 (1974-04-01), Ashkin
patent: 3959045 (1976-05-01), Antypas
patent: 4345967 (1982-08-01), Cook
patent: 4396456 (1983-08-01), Cook
patent: 4448636 (1984-05-01), Baber
patent: 4774194 (1988-09-01), Hokuyou et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5151389 (1992-09-01), Zappella
patent: 5171712 (1992-12-01), Wang et al.
patent: 5237182 (1993-08-01), Kitagawa et al.
patent: 5262347 (1993-11-01), Sands
patent: 5286335 (1994-02-01), Drabik et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5376580 (1994-12-01), Kish et al.
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 5401983 (1995-03-01), Jokerst et al.
patent: 5413951 (1995-05-01), Ohori et al.
patent: 5453405 (1995-09-01), Fan et al.
patent: 5465009 (1995-11-01), Drabik et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5552345 (1996-09-01), Schrantz et al.
patent: 5559043 (1996-09-01), Bruel
patent: 5679152 (1997-10-01), Tischler et al.
patent: 5776794 (1998-07-01), McCann
patent: 5827751 (1998-10-01), Nuyen
patent: 5834325 (1998-11-01), Motoki et al.
patent: 5837561 (1998-11-01), Kish, Jr. et al.
patent: 5846844 (1998-12-01), Akasaki et al.
patent: 5874147 (1999-02-01), Bojarczuk et al.
patent: 5882987 (1999-03-01), Srikrishana et al.
patent: 5920764 (1999-07-01), Hanson et al.
patent: 5926740 (1999-07-01), Forbes et al.
patent: 5966622 (1999-10-01), Levine et al.
patent: 5985687 (1999-11-01), Bowers et al.
patent: 6013534 (2000-01-01), Mountain
patent: 6013567 (2000-01-01), Henley et al.
patent: 6027988 (2000-02-01), Cheung et al.
patent: 6033995 (2000-03-01), Muller
patent: 6036809 (2000-03-01), Kelly et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6113685 (2000-09-01), Wang et al.
patent: 6159824 (2000-12-01), Henley et al.
patent: 6210479 (2001-04-01), Bojarczuk et al.
patent: 6214733 (2001-04-01), Sickmiller
patent: 6300594 (2001-10-01), Kinoshita et al.
patent: 6335263 (2002-01-01), Cheung et al.
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6413839 (2002-07-01), Brown et al.
patent: 6417019 (2002-07-01), Mueller et al.
patent: 6420242 (2002-07-01), Cheung et al.
patent: 6425971 (2002-07-01), Silverbrook
patent: 6448102 (2002-09-01), Kneissl et al.
patent: 6548386 (2003-04-01), Kondo et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6617261 (2003-09-01), Wong et al.
patent: 6645830 (2003-11-01), Shimoda et al.
patent: 6740604 (2004-05-01), Kelly et al.
patent: 6746889 (2004-06-01), Eliashevich et al.
patent: 6818530 (2004-11-01), Shimoda et al.
patent: 6858872 (2005-02-01), Kondo
patent: 6902989 (2005-06-01), Na et al.
patent: 6949449 (2005-09-01), Swenson et al.
patent: 7015117 (2006-03-01), Urbanek
patent: 2003/0104678 (2003-06-01), Kelly et al.
patent: 2004/0072382 (2004-04-01), Kelly et al.
patent: 2005/0106839 (2005-05-01), Shimoda et al.
patent: 2005/0153525 (2005-07-01), Liu
patent: 2005/0239270 (2005-10-01), Fehrer et al.
patent: 3508469 (1986-11-01), None
patent: 10203795 (2003-08-01), None
patent: 10203795 (2003-08-01), None
Yablonovitch et al., “Extreme selectivity in the lift-off of epitaxial GaAs films”,Applied Physics Lettersvol. 51, No. 26, Dec. 28, 1987, (3 pgs).
C.R. Miskys et al., “MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates”,Physica Status Solidi(a) 176, 443, (1999), (4pgs).
Morimoto, “Few Characteristics of Epitaxial GaN-Etching and Thermal Decomposition”,J. Electrochem. Soc.: Solid-State Science and Technology, Oct. 1974, (2 pgs).
Groh et al., “On the Thermal Decomposition of GaN in Vacuum”,Physica Status Solidi(a) 26, 353, (1974), (5 pgs).
Leonard et al., “Photoassisted Dry Etching of GaN”,Applied Physics Lettersvol. 68, Feb. 5, 1996, (3 pgs).
Fastenau et al., “Epitaxial Lift-Off of Thin InAs Layers”,Journals of Electronic Materialsvol. 24, No. 6, (1995), (4 pgs).
Nakamura, “GaN Growth using GaN Buffer Layer”,Japanese Journal of Applied Physics, vol. 30, (1991), (3 pgs).
Ruby, “Micromachined Cellular Filters”,IEEE MTT-S Digest, (1996), (4 pgs).
Ruby, “Micromachined Thin Film Bulk Acoustic Resonaters”,IEEE, (1994).
Yablonovitch et al., “Van der Waals bonding of GaAs on Pd Leads to a permanent solid-phase-topotaxial, metallurgical bond”,Applied Physics Lettersvol. 59, No. 24, (1991), (3 pgs).
Detchprohm et al., “The growth of thick GaN film on sapphire substrate by using ZnO buffer layer”,Journal of Crystal Growth, vol. 128, Nos. 1-4, (1993), (7 pgs).
Bohandy et al., “Metal deposition from a supported metal film using an excimer laser”,Journal of Applied Physicsvol. 60, No. 4, Aug. 1986, (2 pgs).
International Search Report with Written Opinion, mailed Aug. 1, 2006, received in corresponding PCT application (12 pages).
Lewelling, et al., “Finite-Element Modeling Predicts Possibility of Thermoelectrically Cooled Lead-Salt Diode Lasers” IEEE Photonics Technology Letters, vol. 9 No. 3, Mar. 1997, pp. 297-299 (3 pages).
McAlister, et al., “Fabrication of Thin-Film Cleaved Cavities Using a Bonding and Cleaving Fixture” IEEE Photonics Technology Letters, vol. 12, No. 1, Jan. 2000, pp. 22-24 (3 pages).
Riegler, et al., “Index Matching Silicone for High Brightness LED Packaging” NuSil Technology (9 pages).
UC Berkley, “Laser Lift-off & Film Transfer” article last updated Jun. 19, 2002 (4 pages).
Wong, et al., “Selective UV-Laser Processing for Lift-off of GaN Thin Films From Sapphire Substrates” Proceedings of the Symposium on LED for Optoeclectronic Applications and the 28th State of the Art Programs on Compound Semiconductors 98-2, 377, 1998 (8 pages).
Kelly, et al., “Optical Process for Liftoff of Group III-Nitride Films”, Rapid Research Note article, submitted Nov. 28, 1996 (8 pages).
Kelly, et al., “Laser-Processing For Patterned and Free-Standing Nitride Films”, Materials Research Society, vol. 482, pp. 973-978, 1998 (6 pages).
Peyre, et al., “Laser shock processing of materials, physical processes involved and examples of applications”, Journal of Laser Applications, 1996 (7 pages).
Fabbro, et al., “Physical study of laser-produced plasma in confined geometry”, Journal of Applied Physics, vol. 68 No. 2, Jul. 15, 1990 (10 pages).
Sameshima, “Laser beam application to thin film transistors”, Applied Surface Science, 1997 (7 pages).
Wong, et al., “Pulsed Excimer Laser Processing of AIN/GaN Thin Films”, Materials Research Society Symposium Proceedings, vol. 449, 1997 (6 pages).
Kelly, et al., “Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff”, Japanese Journal of Applied Physics, vol. 38, Mar. 1, 1999 (3 pages).
Wong, et al., “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off”, Applied Physics Letters, vol. 75 No. 10, Sep. 6, 1999 (3 pages).
Deng, et al., “Fabrication of Ultra-small Dimention SI1-xGEx Wires in SI Using Pulsed Laser Induced Epitaxy”, Department of Electrical Engineering and Applied Physics, pp. 444-446 (3 pages).
Wong, et al., “InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off”, Applied Physics Letters, vol. 77 No. 18, Oct. 30, 2000 (3 pages).
Wong, et al., “Ubiquitous Blue Light: The Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bondi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of separating layers of material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of separating layers of material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of separating layers of material will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3724445

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.