Method of semiconductor layer growth by MBE

Details Method of semiconductor layer growth by MBE Method of semiconductor layer growth by MBE

1993-10-08

1995-03-21

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437107, 437126, 437133, 117 84, 117 85, 117 86, H01L 21203

Patent

active

053995210

ABSTRACT:
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.

REFERENCES:
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5179399 (1992-12-01), Brennan et al.
Brennan et al. in "Application of reflection mass spectrometry to molecular beam Epitaxial growth of InAlAs and IaGaAs" in J. Vac. Sci. Technol. B7(2), Mar./Apr. 1987 pp. 277-282.

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