Method of semiconductor device manufacture

Details Method of semiconductor device manufacture Method of semiconductor device manufacture

1991-04-15

1993-02-23

Quach, T. N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, 20419234, 156635, H01L 21306

Patent

active

051887053

ABSTRACT:
Semiconductor devices are modified and/or repaired by gas enhanced physical sputtering. A focused ion beam is scanned over an area to be removed while iodine vapor is directed toward the same area. The iodine vapor, which is focused by heating solid iodine to a temperature of 30.degree. C. to 50.degree. C., is adsorbed on the surface of the semiconductor device and aids in the selective sputtering of material to be impinged by the ion beam by enabling a chemical reaction at the material's surface. The iodine may be initially handled in a solid state, exhibiting a low vapor pressure, and is then heated to moderate temperatures inside the focused ion beam system without presenting a toxic hazard. The low reactivity of the iodine enables a high degree of contrast in reaction between the area struck by the ion beam and adjoining areas whereby accurate micromachining can be accomplished.

REFERENCES:
patent: 4397711 (1983-08-01), Donnelly et al.
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 4851097 (1989-07-01), Hattori et al.
patent: 4876112 (1989-10-01), Kaito et al.
patent: 4994140 (1991-02-01), Kenzo et al.
Chew et al, "Iodine Ion Milling of Indium-containing Compound Semiconductors", Appl. Phys. Lett. 44 (1), Jan. 1, 1984, pp. 142-144.
Young et al, "Gas-assisted Focused Ion Beam Etching for Microfabrication and Inspection", Microelectronic Engineering 11 (1990), pp. 409-412.
Takado et al, "Chemically-enhanced GaAs Maskless Etching Using A Novel Focused Ion Beam Etching System with a Cholorine Molecular and Radical Beam", Symposia Proceedings, 1986.
Flanders et al, "Reactive Ion Etching of Indium Compounds Using Iodine Containing Plasmas", J. Vac. Sci. Technol. B 8 (6) Nov./Dec. 1990, pp. 1990-1993.
Yamaguchi, H., et al., "Characteristics of Silicon . . . ", J. Vac. Sci. Technol. B3 (1), Jan./Feb. 1985, pp. 71-74.
Ochiai, Y., et al., "Pressure and irradiation angle . . . " J. Vac. Sci. Technol. B3 (1), Jan./Feb. 1985, pp. 67-70.

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