Fishing – trapping – and vermin destroying
Patent
1994-04-18
1995-07-25
Hearn, Brian F.
Fishing, trapping, and vermin destroying
437133, 148DIG11, 148DIG72, H01L 21331
Patent
active
054361818
ABSTRACT:
A method of self aligning an emitter contact includes forming a base layer (18) on a portion of a collector layer (16). An interface layer (22) is formed on the base layer (18) such that a portion of the base layer (18) remains exposed. An emitter layer (24) is formed on the collector layer (16), the interface layer (22), and the exposed portion of the base layer (18). An emitter cap layer (26) is formed on the emitter layer (24) over the previously exposed area of the base layer (18). An insulating layer (28) is formed on the interface layer (22). An emitter contact (36) is formed on the emitter cap layer (26) at the previously exposed area of the base layer (18). The insulating layer (28) isolates the emitter contact (36) from the base layer (18) and a subsequently formed base contact (38). The insulating layer (28) ensures isolation between the emitter contact ( 36) and the base contact (38) despite misalignment of the emitter contact (36) during formation.
REFERENCES:
patent: 4751195 (1988-06-01), Kawai
patent: 4948751 (1990-08-01), Okamoto et al.
patent: 4954457 (1990-09-01), Jambotkar
patent: 5064772 (1991-11-01), Jambotkar
patent: 5068756 (1991-11-01), Morris et al.
patent: 5077231 (1991-12-01), Plumton et al.
patent: 5166081 (1992-11-01), Inada et al.
Kimiyoshi Yamasaki, Kazuyoshi Asai, and Katsuhiko Kuramada, "GaAs LSI-Directed MESFET's with Self-Aligned Implantation for n.sup.+ -Layer Technology (SAINT)", IEEE Transactions on Electron Devices, vol. ED-29, No. 11, Nov. 1982, pp. 1772-1777.
Shin-Ichi Shikata, Jun-Ichi Tsuchimoto, and Hideki Hayashi, "A Novel Self-Aligned Gate Process for Half-Micrometer Gate GaAs IC's Using ECR-CVD", IEEE Transactions on Electron Devices, vol. 37, No. 8, Aug. 1990, pp. 1800-1803.
Morris Francis J.
Plumton Donald L.
Yang Jau-Yuann
Yuan Han-Tzong
Donaldson Richard L.
Hearn Brian F.
Kesterson James C.
Nguyen Tuan
Skrehot Michael K.
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