Method of selectively irradiating a resist layer using radiation

Details Method of selectively irradiating a resist layer using radiation Method of selectively irradiating a resist layer using radiation

1991-10-31

1993-11-30

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430312, 430394, 430396, 430397, 355 53, 355 77, G03C 500, G03C 506

Patent

active

052664457

ABSTRACT:
A method of forming a patterned resist layer on a semiconductor substrate is described. The substrate is coated with a resist layer and placed on a substrate stage in a lithographic printer. The lithographic printer includes a pulsed radiation source that emits a radiation pulse lasting a pulse time and has a recovery time between two consecutive radiation pulses. The printer has a reticle disposed between the radiation source and the resist layer. The substrate is aligned to the reticle. A stepping field of the resist layer is patterned using a plurality of radiation pulses during multiple passes of the reticle over the stepping field. The substrate moves relative to the reticle at a predetermined velocity during each of the radiation pulses. The substrate motion relative to the reticle is configured so that the radiation source emits a radiation pulse when the center of the reticle is over about the center of the stepping field. A substantially patterned resist layer is formed faster and with less misalignment variance compared to the prior art.

REFERENCES:
patent: 4021239 (1977-05-01), Ogawa
patent: 4884101 (1989-11-01), Tanimoto
patent: 4924257 (1990-05-01), Jain

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