Method of selectively etching titanium-containing materials on a

Details Method of selectively etching titanium-containing materials on a Method of selectively etching titanium-containing materials on a

1992-09-11

1994-07-05

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, 437228, H01L 21306, B44C 122, C03C 1500

Patent

active

053264274

ABSTRACT:
A method of selectively etching titanium-containing materials without attacking aluminum or silicon dioxide is describe, wherein an atomic chlorine etching environment is generated using downstream techniques. Atomic chlorine in the absence of ion bombardment (as provided by downstream etching) etches titanium-containing materials such as titanium nitride without attacking silicon dioxide. In one embodiment of the invention, atomic chlorine is generated by the discharge of energy into molecular chlorine. In another embodiment of the invention, discharge of energy into a fluorine-containing gas causes the generation of atomic fluorine. Molecular chlorine is then added, creating a fluorine-chlorine exchange reaction which produces atomic chlorine. The presence of fluorine inhibits etching of aluminum, but does not impede the etching of titanium-containing materials.

REFERENCES:
patent: 4874459 (1989-10-01), Coldren et al.
Suto, Highly Selective Etching of Si.sub.3 N.sub.4 to SiO.sub.2 Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge, J. Electrochem. Soc., vol. 136, No. 7, Jul. 1989, pp. 2032-2034.

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