Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-03-14
1992-07-14
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156647, 156653, 156657, 1566591, 156662, 20412965, 252 795, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
051299810
ABSTRACT:
The present invention relates to a method of forming thin bodies of a semiconductor material, such as single crystalline silicon, by selectively etching away a portion of the body until a body of the desired thicknes is obtained. The body includes a p-n junction made up of adjacent regions of p-type and n-type conductivity which are immersed in a chemical etchant with the surface of the p-type region being exposed to the etchant. A time varying voltage waveform having first and second voltage levels is applied through the etchant to the p-n junction. The first voltage level causes a zero forward bias across the p-n junction and the second voltage level causes a reverse bias across the p-n junction. The p-type region is removed by the chemical etchant down to the n-type region. This essentially removes the p-n junction in the area where the p-type region is etched away and resulting current through the n-type region causes a passivating layer to form on the surface of the n-type region which stops further etching.
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McNeil Vincent M.
Schmidt Martin A.
Wang Su-Chee S.
General Motors Corporation
Massachusetts Institute of Technology
Powell William A.
Wallace Robert J.
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