Method of selectively depositing materials on a substrate...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

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C438S669000, C438S672000, C257S642000, C257S914000

Reexamination Certificate

active

07897517

ABSTRACT:
A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.

REFERENCES:
patent: 3602635 (1971-08-01), Romankiw
patent: 6143657 (2000-11-01), Liu et al.
patent: 6224713 (2001-05-01), Hembree et al.
patent: 6261953 (2001-07-01), Uozumi
patent: 6426116 (2002-07-01), Sunol
patent: 6432724 (2002-08-01), Ahn et al.
patent: 6537916 (2003-03-01), Mullee et al.
patent: 6653236 (2003-11-01), Wai et al.
patent: 6689700 (2004-02-01), Watkins et al.
patent: 6715498 (2004-04-01), Humayun et al.
patent: 7267727 (2007-09-01), McDermott et al.
patent: 7582561 (2009-09-01), Wai et al.
patent: 2002/0022362 (2002-02-01), Ahn et al.
patent: 2003/0012931 (2003-01-01), Kuroda et al.
patent: 2003/0157248 (2003-08-01), Watkins et al.
patent: 2003/0161954 (2003-08-01), Blackburn et al.
patent: 2004/0266219 (2004-12-01), Sarigiannis et al.
patent: 2005/0136292 (2005-06-01), Mariani et al.
patent: 2005/0191861 (2005-09-01), Verhaverbeke
patent: 2006/0065627 (2006-03-01), Clarke et al.
patent: 2001/032951 (2001-05-01), None
Brian S. Hoyle, et al., Ultrasound in the Process Industries, Engineering Science and Education Journal, Jun. 1994, pp. 119-122.
C. Horst, et al., Activated Solid-Fluid Reactions in Ultrasound Reactors, Chemical Engineering Science 54 (1999), pp. 2849-2858, Institut fur Chemische Verfahrenstechnik, Technische Universitiat Clausthal, LeibnizstraBe 17, D-38678 Clausthal-Zellerfeld, Germany.
Leigh Hagenson Thompson, et al., The Rate Enhancing Effect of Ultrasound by Inducing Supersaturation in a Solid-Liquid System, Chemical Engineering Science 55 (2000), pp. 3085-3090.
Porous Silicates Inspired by Nature: Fabrication and Processing, Materials Today, vol. 7, Issue 3, p. 18, Mar. 2004.
Brown, et al., Carbon Dioxide-Dilated Block Copolymer Templates for Nanostructured Materials, Materials Research Society Symposium Proceedings, vol. 584, pp. 169-174, Dec. 1999.
Watkins, et al., Supercritical Fluid Technology for Semiconductor Device Fabrication Deposition of Metals and Mesoporous Silicates from Carbon Dioxide, Presentation Abstract University of Arizona, 2001.
Wilson, Materials Made Under Pressure, Chemical & Engineering News: Science/Technology, vol. 78, No. 51, pp. 1-7, Dec. 18, 2000.

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