Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-07-03
2000-01-11
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438674, 438675, H01L 214763
Patent
active
060135751
ABSTRACT:
The present invention provides a method of selectively depositing a metal film in an opening of an insulating layer formed on a semiconductor substrate, the opening exposing a surface of at least one of a metal layer, a semiconductor layer, and a semiconductor substrate, the method including the steps of exposing a surface of insulating layer and the substrate surface to a gas plasma which consists of at least one of an inert gas and hydrogen, exposing the insulating layer to a gas containing halogen atoms other than fluorine atoms, and selectively depositing a metal film in the opening of the insulating layer.
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Hitoshi Itoh et al., "Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF.sub.6 and SiH.sub.4 Mixture," Japanese Journal of Applied Physics, vol. 30, No. 7, Jul. 1991, pp. 1525-1529.
Gurley Lynne A.
Kabushiki Kaisha Toshiba
Niebling John F.
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