Method of selective reactive ion etching of substrates

Details Method of selective reactive ion etching of substrates Method of selective reactive ion etching of substrates

1987-10-30

1989-05-02

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156660, 156646, 156662, 156668, 1566611, 156904, 430314, 430313, 437245, 437229, 427 41, B05D 306

Patent

active

048265640

ABSTRACT:
A method of image transfer transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The reist is imagewise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.

REFERENCES:
patent: 4493855 (1985-01-01), Sachdev et al.
patent: 4539049 (1985-09-01), Cohen

Affiliated with

Also associated with

Rating

Method of selective reactive ion etching of substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of selective reactive ion etching of substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of selective reactive ion etching of substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-583169