Method of selective post-growth tuning of an optical bandgap...

Details Method of selective post-growth tuning of an optical bandgap... Method of selective post-growth tuning of an optical bandgap...

2006-12-19

2006-12-19

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Compound semiconductor

C257SE21086

Reexamination Certificate

active

07151061

ABSTRACT:
A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. According to one aspect of the invention, a metal interlayer is deposited between the heterostructure and a dielectric layer such as silica. According to another aspect of the invention, an oxidized surface is provided between a dielectric layer and the heterostructure. The presence of the oxide layer improves stability and reproducibility in the post-annealing process. In a further aspect, the oxide layer may be provided between the interlayer and the heterostructure. In one embodiment of the invention, a photoresist mask with a specific pattern is deposited on the surface of the heterostructure so that the interlayer is deposited in an unmasked region whereon post-growth tuning results. In another embodiment, multiple photolithography is performed to deposit interlayers of varying thickness and/or regions on the heterostructure, followed by thermal post-annealing of the dielectric layer. This method produces heterostructures with optical bandgaps having selectively tuned regions.

REFERENCES:
patent: 4949352 (1990-08-01), Plumb
patent: 5376583 (1994-12-01), Northrup et al.
Cohen et al. Applied Physics Letters vol. 73 No. 6 Aug. 10, 1998 “Native defect engineering . . . GaAs”. pp. 803-805.

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