Method of selective oxygen implantation to dielectrically...

Details Method of selective oxygen implantation to dielectrically... Method of selective oxygen implantation to dielectrically...

2007-08-09

2010-06-22

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C257S347000

Reexamination Certificate

active

07741190

ABSTRACT:
A method of fabricating integrated circuit structures utilizes selective oxygen implantation to dielectrically isolate semiconductor structures using no extra masks. Existing masks are utilized to introduce oxygen into bulk silicon with subsequent thermal oxide growth. Since the method uses bulk silicon, it is cheaper than silicon-on-insulator (SOI) techniques. It also results in bulk-silicon that is latch-up immune.

REFERENCES:
patent: 4975126 (1990-12-01), Margail et al.
patent: 5346841 (1994-09-01), Yajima
patent: 5488004 (1996-01-01), Yang
patent: 6074929 (2000-06-01), Thomas
patent: 6475868 (2002-11-01), Hao et al.
patent: 2002/0033510 (2002-03-01), Tomita
patent: 2005/0280084 (2005-12-01), Morishita et al.

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