Method of selective oxidation in manufacture of semiconductor de

Details Method of selective oxidation in manufacture of semiconductor de Method of selective oxidation in manufacture of semiconductor de

1978-04-18

1979-10-09

Steiner, Arthur J.

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 91, H01L 21265, H01L 2126

Patent

active

041704924

ABSTRACT:
A method of selectively enhancing the growth rate of silicon oxide in the manufacture of semiconductor devices results in a reduction in encroachment of oxide into the edges of areas masked by silicon nitride. Implanting an impurity material into the monocrystalline silicon surface, without annealling to correct implant damage, causes the surface to oxidize at lower temperatures and faster rates.

REFERENCES:
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patent: 3755001 (1973-08-01), Kooi et al.
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4023195 (1977-05-01), Richman
patent: 4055444 (1977-10-01), Rao
patent: 4069068 (1978-01-01), Beyer et al.
Makris et al., "Forming . . . Geometries . . . I.C.", IBM--Tech. Discl. Bull. 16, (1974), 3240.
Nomura et al., Enhanced Oxidation of Si . . . ", Ion Impl. in S/C (ed) S. Namba, Plenum 1974, 681.
Nagasaki et al., "Gettering Technique . . . ", IBM--TDB, 17 (1975), 3587.
Beyer et al., "Elimination of Stacking Faults", IBM--TDB, 19, 1977, 3051.

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